NVB5404NT4G

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Mfr.Part #
NVB5404NT4G
Manufacturer
onsemi
Package / Case
D2PAK
Datasheet
Download
Description
MOSFET N-CH 40V 24A D2PAK
Stock
796
In Stock :
796

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Lifecycle Status :
LIFETIME (Last Updated: 1 week ago)
Factory Lead Time :
25 Weeks
Number of Terminations :
2
ECCN Code :
EAR99
Case Connection :
DRAIN
Element Configuration :
Single
Rds On Max :
4.5 mΩ
Drain to Source Voltage (Vdss) :
40V
Input Capacitance :
7nF
Package / Case :
D2PAK
RoHS Status :
ROHS3 Compliant
Terminal Form :
Gull wing
JESD-609 Code :
e3
JESD-30 Code :
R-PSSO-G2
Pin Count :
3
Rise Time :
65ns
Number of Elements :
1
Surface Mount :
yes
Packaging :
Tape and Reel (TR)
Turn-Off Delay Time :
85 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Operating Temperature :
175°C
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.0045ohm
Lead Free :
Lead Free
Number of Pins :
3
Transistor Application :
SWITCHING
Fall Time (Typ) :
85 ns
Pbfree Code :
yes
Terminal Finish :
Tin (Sn)
Continuous Drain Current (ID) :
24A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn On Delay Time :
10 ns
Published :
2011
Pulsed Drain Current-Max (IDM) :
670A
Power Dissipation :
5.4W
Polarity/Channel Type :
N-Channel
Radiation Hardening :
No
Gate to Source Voltage (Vgs) :
20V
Min Operating Temperature :
-55°C
Max Power Dissipation :
5.4W
Datasheets
NVB5404NT4G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVB5404NT4G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Package / Case:D2PAK, Number of Pins:3, NVB5404NT4G pinout, NVB5404NT4G datasheet PDF, NVB5404NT4G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVB5404NT4G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVB5404NT4G


Tape & Reel (TR) 40V D2PAK

NVB5404NT4G Overview


The drain current is the maximum continuous current the device can conduct, and this device has 24A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 670A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 40V is required between drain and source (Vdss).

NVB5404NT4G Features


a continuous drain current (ID) of 24A
the turn-off delay time is 85 ns
based on its rated peak drain current 670A.
a 40V drain to source voltage (Vdss)


NVB5404NT4G Applications


There are a lot of ON Semiconductor
NVB5404NT4G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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