NVB5404NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

24A

Power Dissipation :

5.4W

Radiation Hardening :

No

Number of Pins :

3

Polarity/Channel Type :

N-Channel

JESD-609 Code :

e3

Terminal Form :

Gull wing

Package / Case :

D2PAK

Surface Mount :

yes

Number of Terminations :

2

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0045ohm

Turn-Off Delay Time :

85 ns

Factory Lead Time :

25 Weeks

Max Power Dissipation :

5.4W

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Rds On Max :

4.5 mΩ

Min Operating Temperature :

-55°C

Drain to Source Voltage (Vdss) :

40V

Number of Elements :

1

Pin Count :

3

Max Operating Temperature :

175°C

Pulsed Drain Current-Max (IDM) :

670A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn On Delay Time :

10 ns

Fall Time (Typ) :

85 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Input Capacitance :

7nF

Lifecycle Status :

LIFETIME (Last Updated: 1 week ago)

Pbfree Code :

yes

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Rise Time :

65ns

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Published :

2011