NVB5404NT4G

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Mfr.Part #
NVB5404NT4G
Manufacturer
onsemi
Package / Case
D2PAK
Datasheet
Download
Description
MOSFET N-CH 40V 24A D2PAK
Stock
796
In Stock :
796

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
40V
Published :
2011
Min Operating Temperature :
-55°C
Drain-source On Resistance-Max :
0.0045ohm
Case Connection :
DRAIN
Continuous Drain Current (ID) :
24A
Fall Time (Typ) :
85 ns
Pbfree Code :
yes
Packaging :
Tape and Reel (TR)
Lead Free :
Lead Free
Terminal Form :
Gull wing
JESD-30 Code :
R-PSSO-G2
FET Technology :
METAL-OXIDE SEMICONDUCTOR
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rise Time :
65ns
Pulsed Drain Current-Max (IDM) :
670A
Turn-Off Delay Time :
85 ns
Rds On Max :
4.5 mΩ
Input Capacitance :
7nF
Surface Mount :
yes
Turn On Delay Time :
10 ns
Number of Terminations :
2
Element Configuration :
Single
Factory Lead Time :
25 Weeks
Number of Elements :
1
Pin Count :
3
Lifecycle Status :
LIFETIME (Last Updated: 1 week ago)
Max Operating Temperature :
175°C
Number of Pins :
3
Radiation Hardening :
No
JESD-609 Code :
e3
Max Power Dissipation :
5.4W
Power Dissipation :
5.4W
Polarity/Channel Type :
N-Channel
Transistor Application :
SWITCHING
Package / Case :
D2PAK
Gate to Source Voltage (Vgs) :
20V
Datasheets
NVB5404NT4G
Introducing Transistors - FETs, MOSFETs - Single onsemi NVB5404NT4G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Number of Pins:3, Package / Case:D2PAK, NVB5404NT4G pinout, NVB5404NT4G datasheet PDF, NVB5404NT4G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NVB5404NT4G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NVB5404NT4G


Tape & Reel (TR) 40V D2PAK

NVB5404NT4G Overview


The drain current is the maximum continuous current the device can conduct, and this device has 24A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 670A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 40V is required between drain and source (Vdss).

NVB5404NT4G Features


a continuous drain current (ID) of 24A
the turn-off delay time is 85 ns
based on its rated peak drain current 670A.
a 40V drain to source voltage (Vdss)


NVB5404NT4G Applications


There are a lot of ON Semiconductor
NVB5404NT4G applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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