NTMFS6B14NT1G
- Mfr.Part #
- NTMFS6B14NT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 10A/50A 5DFN
- Stock
- 26,028
- In Stock :
- 26,028
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 3.1W Ta 77W Tc
- REACH SVHC :
- No SVHC
- Fall Time (Typ) :
- 6.8 ns
- Vgs (Max) :
- ±20V
- Number of Pins :
- 5
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 1.05mm
- Drain to Source Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 8-PowerTDFN
- Mount :
- Surface Mount
- Threshold Voltage :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 20A, 10V
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta 50A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 50V
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Pbfree Code :
- yes
- Width :
- 5.1mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 39ns
- Reach Compliance Code :
- not_compliant
- Turn On Delay Time :
- 9.6 ns
- Length :
- 6.1mm
- Continuous Drain Current (ID) :
- 50A
- Factory Lead Time :
- 16 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Turn-Off Delay Time :
- 17 ns
- Published :
- 2014
- FET Type :
- N-Channel
- Datasheets
- NTMFS6B14NT1G

N-Channel Tape & Reel (TR) 15m Ω @ 20A, 10V ±20V 1300pF @ 50V 20nC @ 10V 8-PowerTDFN
NTMFS6B14NT1G Overview
A device's maximal input capacitance is 1300pF @ 50V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 50A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 17 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (6V 10V).
NTMFS6B14NT1G Features
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 17 ns
a threshold voltage of 4V
NTMFS6B14NT1G Applications
There are a lot of ON Semiconductor
NTMFS6B14NT1G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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