NTMFS6B05NT1G
- Mfr.Part #
- NTMFS6B05NT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 16A/104A 5DFN
- Stock
- 21,749
- In Stock :
- 21,749
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 50V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Width :
- 5.1mm
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Breakdown Voltage :
- 100V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 3.3W Ta 138W Tc
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 104A Tc
- Rds On (Max) @ Id, Vgs :
- 8m Ω @ 20A, 10V
- Turn-Off Delay Time :
- 39 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- JESD-609 Code :
- e3
- Threshold Voltage :
- 4V
- Contact Plating :
- Tin
- FET Type :
- N-Channel
- Number of Channels :
- 1
- Turn On Delay Time :
- 14 ns
- Length :
- 6.1mm
- Factory Lead Time :
- 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Element Configuration :
- Single
- Fall Time (Typ) :
- 16 ns
- Continuous Drain Current (ID) :
- 104A
- Package / Case :
- 8-PowerTDFN
- Number of Pins :
- 5
- Published :
- 2006
- Rise Time :
- 43ns
- Height :
- 1.05mm
- Reach Compliance Code :
- not_compliant
- Datasheets
- NTMFS6B05NT1G

N-Channel Tape & Reel (TR) 8m Ω @ 20A, 10V ±20V 3100pF @ 50V 44nC @ 10V 8-PowerTDFN
NTMFS6B05NT1G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3100pF @ 50V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 104A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 39 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (6V 10V) reduces this device's overall power consumption.
NTMFS6B05NT1G Features
a continuous drain current (ID) of 104A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 39 ns
a threshold voltage of 4V
NTMFS6B05NT1G Applications
There are a lot of ON Semiconductor
NTMFS6B05NT1G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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