NTMFS5C646NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

5.1 ns

Element Configuration :

Single

ECCN Code :

EAR99

REACH SVHC :

No SVHC

RoHS Status :

ROHS3 Compliant

Length :

6.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

4.7m Ω @ 50A, 10V

JESD-30 Code :

R-PDSO-F5

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Threshold Voltage :

2V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

60V

Terminal Position :

Dual

Gate Charge (Qg) (Max) @ Vgs :

33.7nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2014

Rise Time :

14.9ns

Power Dissipation-Max :

3.7W Ta 79W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

8

JESD-609 Code :

e3

Height :

1.05mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2V @ 250μA

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

19A

Pulsed Drain Current-Max (IDM) :

750A

Pbfree Code :

yes

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0063Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2164pF @ 25V

Width :

5.1mm

Turn On Delay Time :

10.4 ns

Number of Elements :

1

Package / Case :

8-PowerTDFN

Number of Terminations :

5

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Number of Channels :

1

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

23.6 ns

FET Type :

N-Channel

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

19A Ta