NTMFS5C612NLWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2V @ 250μA

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 50A, 10V

Current - Continuous Drain (Id) @ 25°C :

235A Tc

Factory Lead Time :

16 Weeks

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 4.5V

Package / Case :

8-PowerTDFN, 5 Leads

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Terminal Form :

Flat

ECCN Code :

EAR99

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

6660pF @ 25V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-F5

Case Connection :

DRAIN

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Number of Elements :

1

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

3.8W Ta 167W Tc

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

60V

Drain-source On Resistance-Max :

0.0015Ohm

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Published :

2015

Avalanche Energy Rating (Eas) :

451 mJ

Number of Terminations :

5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

900A

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE