NTMFS5C609NLT1G

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Mfr.Part #
NTMFS5C609NLT1G
Manufacturer
onsemi
Package / Case
Datasheet
Download
Description
MOSFET N-CH 60V SO8FL
Stock
22,413
In Stock :
22,413

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Surface Mount :
yes
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Dual
Packaging :
Tape and Reel (TR)
ECCN Code :
EAR99
Operating Temperature (Min) :
-55°C
Drain-source On Resistance-Max :
0.0023Ohm
Transistor Element Material :
SILICON
Operating Temperature (Max) :
175°C
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
16 Weeks
Terminal Finish :
Tin (Sn)
Terminal Form :
Flat
Pulsed Drain Current-Max (IDM) :
900A
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
451 mJ
Power Dissipation-Max (Abs) :
167W
JESD-609 Code :
e3
JESD-30 Code :
R-PDSO-F5
DS Breakdown Voltage-Min :
60V
Number of Elements :
1
Reach Compliance Code :
not_compliant
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Terminations :
5
Drain Current-Max (Abs) (ID) :
250A
Datasheets
NTMFS5C609NLT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTMFS5C609NLT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, NTMFS5C609NLT1G pinout, NTMFS5C609NLT1G datasheet PDF, NTMFS5C609NLT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTMFS5C609NLT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



Tape & Reel (TR)

NTMFS5C609NLT1G Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 451 mJ.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 250A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 900A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.

NTMFS5C609NLT1G Features


the avalanche energy rating (Eas) is 451 mJ
based on its rated peak drain current 900A.


NTMFS5C609NLT1G Applications


There are a lot of ON Semiconductor
NTMFS5C609NLT1G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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