NTMFS5C604NLT3G

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Mfr.Part #
NTMFS5C604NLT3G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 60V 40A/287A 5DFN
Stock
30,921
In Stock :
30,921

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
60V
Mounting Type :
Surface Mount
Reach Compliance Code :
not_compliant
Mount :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
JESD-30 Code :
R-PDSO-F5
Gate Charge (Qg) (Max) @ Vgs :
120nC @ 10V
Terminal Form :
Flat
Operating Mode :
ENHANCEMENT MODE
FET Type :
N-Channel
Drain-source On Resistance-Max :
0.0017Ohm
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
900A
Drain Current-Max (Abs) (ID) :
276A
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
40A Ta 287A Tc
Terminal Finish :
Tin (Sn)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~175°C TJ
Number of Terminations :
5
Rds On (Max) @ Id, Vgs :
1.2m Ω @ 50A, 10V
Drain to Source Voltage (Vdss) :
60V
Pbfree Code :
yes
Vgs(th) (Max) @ Id :
2V @ 250μA
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Continuous Drain Current (ID) :
287A
Number of Elements :
1
Published :
2014
Configuration :
SINGLE WITH BUILT-IN DIODE
Avalanche Energy Rating (Eas) :
776 mJ
Lead Free :
Lead Free
Input Capacitance (Ciss) (Max) @ Vds :
8900pF @ 25V
Number of Pins :
8
Package / Case :
8-PowerTDFN
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
3.9W Ta 200W Tc
Case Connection :
DRAIN
Factory Lead Time :
18 Weeks
ECCN Code :
EAR99
Terminal Position :
Dual
Datasheets
NTMFS5C604NLT3G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTMFS5C604NLT3G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:5, Number of Pins:8, Package / Case:8-PowerTDFN, NTMFS5C604NLT3G pinout, NTMFS5C604NLT3G datasheet PDF, NTMFS5C604NLT3G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTMFS5C604NLT3G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTMFS5C604NLT3G


N-Channel Tape & Reel (TR) 1.2m Ω @ 50A, 10V ±20V 8900pF @ 25V 120nC @ 10V 60V 8-PowerTDFN

NTMFS5C604NLT3G Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 776 mJ.A device's maximum input capacitance is 8900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 287A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 276A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 900A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

NTMFS5C604NLT3G Features


the avalanche energy rating (Eas) is 776 mJ
a continuous drain current (ID) of 287A
based on its rated peak drain current 900A.
a 60V drain to source voltage (Vdss)


NTMFS5C604NLT3G Applications


There are a lot of ON Semiconductor
NTMFS5C604NLT3G applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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