NTMFS5C604NLT3G
- Mfr.Part #
- NTMFS5C604NLT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 40A/287A 5DFN
- Stock
- 30,921
- In Stock :
- 30,921
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 60V
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Mount :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-30 Code :
- R-PDSO-F5
- Gate Charge (Qg) (Max) @ Vgs :
- 120nC @ 10V
- Terminal Form :
- Flat
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Drain-source On Resistance-Max :
- 0.0017Ohm
- Transistor Element Material :
- SILICON
- Pulsed Drain Current-Max (IDM) :
- 900A
- Drain Current-Max (Abs) (ID) :
- 276A
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 40A Ta 287A Tc
- Terminal Finish :
- Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 5
- Rds On (Max) @ Id, Vgs :
- 1.2m Ω @ 50A, 10V
- Drain to Source Voltage (Vdss) :
- 60V
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- 287A
- Number of Elements :
- 1
- Published :
- 2014
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 776 mJ
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 8900pF @ 25V
- Number of Pins :
- 8
- Package / Case :
- 8-PowerTDFN
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 3.9W Ta 200W Tc
- Case Connection :
- DRAIN
- Factory Lead Time :
- 18 Weeks
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Datasheets
- NTMFS5C604NLT3G

N-Channel Tape & Reel (TR) 1.2m Ω @ 50A, 10V ±20V 8900pF @ 25V 120nC @ 10V 60V 8-PowerTDFN
NTMFS5C604NLT3G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 776 mJ.A device's maximum input capacitance is 8900pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 287A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 276A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 900A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 60V.To operate this transistor, you need to apply a 60V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTMFS5C604NLT3G Features
the avalanche energy rating (Eas) is 776 mJ
a continuous drain current (ID) of 287A
based on its rated peak drain current 900A.
a 60V drain to source voltage (Vdss)
NTMFS5C604NLT3G Applications
There are a lot of ON Semiconductor
NTMFS5C604NLT3G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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