NTMFS5C430NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Published :

2016

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

900A

Terminal Form :

Flat

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

338 mJ

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 50A, 10V

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

3.5V @ 250µA

JESD-30 Code :

R-PDSO-F5

Current - Continuous Drain (Id) @ 25°C :

35A Ta 185A Tc

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Package / Case :

8-PowerTDFN, 5 Leads

Terminal Position :

Dual

Power Dissipation-Max :

3.8W Ta 106W Tc

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.0017Ohm

DS Breakdown Voltage-Min :

40V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Drain Current-Max (Abs) (ID) :

185A

Number of Terminations :

5

Drain to Source Voltage (Vdss) :

40V

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Mounting Type :

Surface Mount

FET Type :

N-Channel

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes