NTMFS5C430NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

3.8W Ta 106W Tc

Transistor Element Material :

SILICON

Terminal Form :

Flat

Rds On (Max) @ Id, Vgs :

1.7m Ω @ 50A, 10V

Drain Current-Max (Abs) (ID) :

185A

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

900A

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

338 mJ

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Drain-source On Resistance-Max :

0.0017Ohm

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

8-PowerTDFN, 5 Leads

Drain to Source Voltage (Vdss) :

40V

Current - Continuous Drain (Id) @ 25°C :

35A Ta 185A Tc

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Dual

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3300pF @ 25V

Number of Elements :

1

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

DS Breakdown Voltage-Min :

40V

Published :

2015

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-F5

Lead Free :

Lead Free