NTMFS5C410NLTWFT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

40V

Pulsed Drain Current-Max (IDM) :

900A

FET Type :

N-Channel

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

8862pF @ 25V

Drain-source On Resistance-Max :

0.0012Ohm

Number of Elements :

1

Vgs (Max) :

±20V

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

706 mJ

Vgs(th) (Max) @ Id :

2V @ 250μA

Number of Terminations :

5

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Dual

Factory Lead Time :

16 Weeks

Number of Pins :

8

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

40V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F5

Terminal Form :

Flat

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

0.9m Ω @ 50A, 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

50A Ta 330A Tc

Reach Compliance Code :

not_compliant

Gate Charge (Qg) (Max) @ Vgs :

143nC @ 10V

Published :

2015

Power Dissipation-Max :

3.8W Ta 167W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

330A