NTMFS5832NLT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Pbfree Code :

yes

Contact Plating :

Tin

JESD-609 Code :

e3

Lead Free :

Lead Free

Turn-Off Delay Time :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Package / Case :

8-PowerTDFN, 5 Leads

Element Configuration :

Single

Fall Time (Typ) :

8 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

20A

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 20A, 10V

Height :

1.1mm

Pin Count :

5

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

5

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Factory Lead Time :

16 Weeks

Rise Time :

24ns

Turn On Delay Time :

13 ns

Terminal Form :

Flat

Power Dissipation-Max :

3.1W Ta 96W Tc

Surface Mount :

yes

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

40V

Number of Pins :

5

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

20A Ta 111A Tc

Number of Elements :

1

Length :

5.1mm

Threshold Voltage :

1V

Pulsed Drain Current-Max (IDM) :

443A

Published :

2006

Width :

6.1mm

Power Dissipation :

3.1W

Resistance :

6.5mOhm