NTMFS4H01NT1G

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Mfr.Part #
NTMFS4H01NT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 25V 54A/334A 5DFN
Stock
5,351
In Stock :
5,351

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
36 Weeks
Vgs(th) (Max) @ Id :
2.1V @ 250μA
ECCN Code :
EAR99
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Power Dissipation-Max :
3.2W Ta 125W Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Published :
2014
Reach Compliance Code :
not_compliant
Gate Charge (Qg) (Max) @ Vgs :
85nC @ 10V
Contact Plating :
Tin
Rds On (Max) @ Id, Vgs :
0.7m Ω @ 30A, 10V
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5693pF @ 12V
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Drain to Source Voltage (Vdss) :
25V
Mounting Type :
Surface Mount
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Continuous Drain Current (ID) :
334A
Lead Free :
Lead Free
Package / Case :
8-PowerTDFN
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
54A Ta 334A Tc
Mount :
Surface Mount
Number of Pins :
8
Configuration :
Single
Datasheets
NTMFS4H01NT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTMFS4H01NT1G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Number of Pins:8, NTMFS4H01NT1G pinout, NTMFS4H01NT1G datasheet PDF, NTMFS4H01NT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTMFS4H01NT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTMFS4H01NT1G


N-Channel Tape & Reel (TR) 0.7m Ω @ 30A, 10V ±20V 5693pF @ 12V 85nC @ 10V 25V 8-PowerTDFN

NTMFS4H01NT1G Description


NTMFS4H01NT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor. Based on its low RDS(on), it is able to minimize conduction losses, and it is capable of minimizing driver losses on the basis of its low capacitance. Due to its superior quality and reliable performance, it is well suited for a wide range of applications, including DC-DC converters, system voltage rails, and more.



NTMFS4H01NT1G Features


  • Low RDS(on)

  • Low capacitance

  • Optimized gate charge

  • Low conduction losses

  • Available in the SO8-FL package



NTMFS4H01NT1G Applications


  • Netcom, telecom

  • System voltage rails

  • Servers & point of load

  • High-performance DC-DC converters


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