NTMFS4C08NT3G
- Mfr.Part #
- NTMFS4C08NT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9A/52A 5DFN
- Stock
- 6,492
- In Stock :
- 6,492
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 760mW Ta 25.5W Tc
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Package / Case :
- 8-PowerTDFN
- Pin Count :
- 5
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 52A
- FET Type :
- N-Channel
- Drain Current-Max (Abs) (ID) :
- 9A
- Rds On (Max) @ Id, Vgs :
- 5.8m Ω @ 18A, 10V
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1113pF @ 15V
- Vgs(th) (Max) @ Id :
- 2.1V @ 250μA
- Number of Pins :
- 5
- Published :
- 2014
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 18.2nC @ 10V
- Terminal Position :
- Dual
- Drain to Source Voltage (Vdss) :
- 30V
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 30V
- Number of Terminations :
- 5
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Gate to Source Voltage (Vgs) :
- 20V
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 16 Weeks
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 52A Tc
- Datasheets
- NTMFS4C08NT3G

N-Channel Tape & Reel (TR) 5.8m Ω @ 18A, 10V ±20V 1113pF @ 15V 18.2nC @ 10V 30V 8-PowerTDFN
NTMFS4C08NT3G Overview
A device's maximal input capacitance is 1113pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 52A, which represents the maximum continuous current it can conduct.In this device, the drain current is 9A, which is the maximum continuous current the device can conduct.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 30V.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTMFS4C08NT3G Features
a continuous drain current (ID) of 52A
a 30V drain to source voltage (Vdss)
NTMFS4C08NT3G Applications
There are a lot of ON Semiconductor
NTMFS4C08NT3G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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