NTMFS4C05NT1G
- Mfr.Part #
- NTMFS4C05NT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11.9A 5DFN
- Stock
- 1,499
- In Stock :
- 1,499
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 16 Weeks
- Terminal Form :
- Flat
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 30A, 10V
- Rise Time :
- 32ns
- Element Configuration :
- Single
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1972pF @ 15V
- Number of Pins :
- 5
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Number of Terminations :
- 5
- Fall Time (Typ) :
- 7 ns
- Package / Case :
- 8-PowerTDFN
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Power Dissipation-Max :
- 770mW Ta 33W Tc
- Pin Count :
- 5
- Length :
- 6.1mm
- Width :
- 5.1mm
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 21 ns
- Case Connection :
- DRAIN
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Height :
- 1.05mm
- Published :
- 2014
- Continuous Drain Current (ID) :
- 78A
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 11 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 6 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- yes
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Threshold Voltage :
- 2.2V
- Current - Continuous Drain (Id) @ 25°C :
- 11.9A Ta
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- NTMFS4C05NT1G

N-Channel Tape & Reel (TR) 3.4m Ω @ 30A, 10V ±20V 1972pF @ 15V 14nC @ 4.5V 8-PowerTDFN
NTMFS4C05NT1G Overview
The maximum input capacitance of this device is 1972pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 78A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 21 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.2V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NTMFS4C05NT1G Features
a continuous drain current (ID) of 78A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
a threshold voltage of 2.2V
NTMFS4C05NT1G Applications
There are a lot of ON Semiconductor
NTMFS4C05NT1G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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