NTMFS4C029NT1G

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Mfr.Part #
NTMFS4C029NT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN, 5 Leads
Datasheet
Download
Description
MOSFET N-CH 30V 15A/46A 5DFN
Stock
29,700
In Stock :
29,700

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-609 Code :
e3
Case Connection :
DRAIN
Vgs (Max) :
±20V
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Pbfree Code :
yes
Drain Current-Max (Abs) (ID) :
8.2A
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
16 Weeks
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Dual
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Package / Case :
8-PowerTDFN, 5 Leads
Gate Charge (Qg) (Max) @ Vgs :
18.6nC @ 10V
Terminal Form :
Flat
DS Breakdown Voltage-Min :
30V
Current - Continuous Drain (Id) @ 25°C :
15A Ta 46A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
987pF @ 15V
Reach Compliance Code :
not_compliant
Operating Mode :
ENHANCEMENT MODE
Rds On (Max) @ Id, Vgs :
5.88m Ω @ 30A, 10V
Power Dissipation-Max :
2.49W Ta 23.6W Tc
Avalanche Energy Rating (Eas) :
31 mJ
Transistor Element Material :
SILICON
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PDSO-F5
Configuration :
SINGLE WITH BUILT-IN DIODE
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Pulsed Drain Current-Max (IDM) :
132A
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
30V
Number of Terminations :
5
Drain-source On Resistance-Max :
0.0058ohm
Lead Free :
Lead Free
Datasheets
NTMFS4C029NT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTMFS4C029NT1G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, 5 Leads, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, NTMFS4C029NT1G pinout, NTMFS4C029NT1G datasheet PDF, NTMFS4C029NT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTMFS4C029NT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTMFS4C029NT1G


N-Channel Tape & Reel (TR) 5.88m Ω @ 30A, 10V ±20V 987pF @ 15V 18.6nC @ 10V 30V 8-PowerTDFN, 5 Leads

NTMFS4C029NT1G Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 31 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 987pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8.2A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 132A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

NTMFS4C029NT1G Features


the avalanche energy rating (Eas) is 31 mJ
based on its rated peak drain current 132A.
a 30V drain to source voltage (Vdss)


NTMFS4C029NT1G Applications


There are a lot of ON Semiconductor
NTMFS4C029NT1G applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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