NTMFS4C025NT1G

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Mfr.Part #
NTMFS4C025NT1G
Manufacturer
onsemi
Package / Case
8-PowerTDFN, 5 Leads
Datasheet
Download
Description
MOSFET N-CH 30V 20A/69A 5DFN
Stock
2,027
In Stock :
2,027

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Lead Free :
Lead Free
Power Dissipation-Max :
2.55W Ta 30.5W Tc
Package / Case :
8-PowerTDFN, 5 Leads
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Drain to Source Voltage (Vdss) :
30V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
Mounting Type :
Surface Mount
Factory Lead Time :
16 Weeks
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
1683pF @ 15V
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Operating Temperature :
-55°C~150°C TJ
Rds On (Max) @ Id, Vgs :
3.41m Ω @ 30A, 10V
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
2.1V @ 250μA
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
20A Ta 69A Tc
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Datasheets
NTMFS4C025NT1G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTMFS4C025NT1G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, 5 Leads, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, NTMFS4C025NT1G pinout, NTMFS4C025NT1G datasheet PDF, NTMFS4C025NT1G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTMFS4C025NT1G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTMFS4C025NT1G


N-Channel Tape & Reel (TR) 3.41m Ω @ 30A, 10V ±20V 1683pF @ 15V 26nC @ 10V 30V 8-PowerTDFN, 5 Leads

Description


The NTMFS4C025NT1G is a Power MOSFET, N Channel, 30 V, 69 A, 0.00282 ohm, DFN, Surface Mount. A power MOSFET is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) that can handle large amounts of power. Its key advantages over other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, are high switching speed and low voltage efficiency. It shares an isolated gate with the IGBT, making it simple to operate. Low gain can occur, and the gate voltage may need to be higher than the voltage under control in some cases.



Features


? Optimized Gate Charge to Minimize Switching Losses

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant

? Low RDS(on) to Minimize Conduction Losses

? Low Capacitance to Minimize Driver Losses

? High Switching Speed and Good Efficiency at Low Voltages



Applications


? CPU Power Delivery

? DC?DC Converters

? Switch

? Small Motor Control

? Automotive Applications


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