NTMFS4C024NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Factory Lead Time :

16 Weeks

Terminal Form :

Flat

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 30A, 10V

Power Dissipation-Max :

2.57W Ta 33W Tc

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

1972pF @ 15V

Package / Case :

8-PowerTDFN, 5 Leads

Mounting Type :

Surface Mount

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

11.9A

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

FET Type :

N-Channel

Vgs (Max) :

±20V

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

not_compliant

Published :

2016

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-F5

Number of Terminations :

5

DS Breakdown Voltage-Min :

30V

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.004ohm

Current - Continuous Drain (Id) @ 25°C :

21.7A Ta 78A Tc