NTMFS4985NFT3G
- Mfr.Part #
- NTMFS4985NFT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17.5A/65A 5DFN
- Stock
- 24,618
- In Stock :
- 24,618
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 30.5nC @ 10V
- Pin Count :
- 5
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Flat
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 21 ns
- Rise Time :
- 32ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2100pF @ 15V
- Package / Case :
- 8-PowerTDFN
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 6 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time :
- 2 Weeks
- Turn On Delay Time :
- 11 ns
- Published :
- 2012
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A Ta 65A Tc
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 1.63W Ta 22.73W Tc
- Radiation Hardening :
- No
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Number of Pins :
- 5
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- Vgs(th) (Max) @ Id :
- 2.3V @ 1mA
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 30A, 10V
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 65A
- Datasheets
- NTMFS4985NFT3G

N-Channel Tape & Reel (TR) 3.4m Ω @ 30A, 10V ±20V 2100pF @ 15V 30.5nC @ 10V 8-PowerTDFN
NTMFS4985NFT3G Overview
A device's maximal input capacitance is 2100pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 65A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 21 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTMFS4985NFT3G Features
a continuous drain current (ID) of 65A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 21 ns
NTMFS4985NFT3G Applications
There are a lot of ON Semiconductor
NTMFS4985NFT3G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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