NTMFS4985NFT1G
- Mfr.Part #
- NTMFS4985NFT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17.5A/65A 5DFN
- Stock
- 8,732
- In Stock :
- 8,732
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 11 ns
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Number of Terminations :
- 5
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2.3V @ 1mA
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation-Max :
- 1.63W Ta 22.73W Tc
- Pin Count :
- 5
- Terminal Form :
- Flat
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 65A
- Turn-Off Delay Time :
- 21 ns
- Rise Time :
- 32ns
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 30.5nC @ 10V
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 2100pF @ 15V
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 6 ns
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A Ta 65A Tc
- Number of Pins :
- 5
- DS Breakdown Voltage-Min :
- 30V
- Terminal Finish :
- Tin (Sn)
- Published :
- 2012
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 30V
- Vgs (Max) :
- ±20V
- Surface Mount :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 2 Weeks
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 30A, 10V
- Datasheets
- NTMFS4985NFT1G

N-Channel Tape & Reel (TR) 3.4m Ω @ 30A, 10V ±20V 2100pF @ 15V 30.5nC @ 10V 30V 8-PowerTDFN
NTMFS4985NFT1G Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2100pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 65A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 21 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 30V in order to maintain normal operation.Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTMFS4985NFT1G Features
a continuous drain current (ID) of 65A
the turn-off delay time is 21 ns
a 30V drain to source voltage (Vdss)
NTMFS4985NFT1G Applications
There are a lot of ON Semiconductor
NTMFS4985NFT1G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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