NTMFS4982NFT3G
- Mfr.Part #
- NTMFS4982NFT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 26.5A/207A 5DFN
- Stock
- 295
- In Stock :
- 295
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.0019Ohm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 1.5W Ta
- Drain to Source Voltage (Vdss) :
- 30V
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Continuous Drain Current (ID) :
- 207A
- Package / Case :
- 8-PowerTDFN
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Drain Current-Max (Abs) (ID) :
- 36A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Form :
- Flat
- Rds On (Max) @ Id, Vgs :
- 1.3m Ω @ 25A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pin Count :
- 5
- Current - Continuous Drain (Id) @ 25°C :
- 26.5A Ta 207A Tc
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 16 Weeks
- DS Breakdown Voltage-Min :
- 30V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 15V
- Published :
- 2014
- Number of Pins :
- 5
- Vgs(th) (Max) @ Id :
- 2.2V @ 1mA
- Number of Terminations :
- 5
- Number of Elements :
- 1
- Datasheets
- NTMFS4982NFT3G

N-Channel Tape & Reel (TR) 1.3m Ω @ 25A, 10V ±20V 6000pF @ 15V 84nC @ 10V 30V 8-PowerTDFN
NTMFS4982NFT3G Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 6000pF @ 15V.This device conducts a continuous drain current (ID) of 207A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 36A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
NTMFS4982NFT3G Features
a continuous drain current (ID) of 207A
a 30V drain to source voltage (Vdss)
NTMFS4982NFT3G Applications
There are a lot of ON Semiconductor
NTMFS4982NFT3G applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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