NTMFS4982NFT1G
- Mfr.Part #
- NTMFS4982NFT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 26.5A/207A 5DFN
- Stock
- 2,394
- In Stock :
- 2,394
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 84nC @ 10V
- Rise Time :
- 31.6ns
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 207A
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 1.3m Ω @ 25A, 10V
- Fall Time (Typ) :
- 12 ns
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 6000pF @ 15V
- Contact Plating :
- Tin
- Drain to Source Breakdown Voltage :
- 30V
- Terminal Form :
- Flat
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 26.5A Ta 207A Tc
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 2.2V @ 1mA
- Turn-Off Delay Time :
- 34.3 ns
- Pbfree Code :
- yes
- Number of Pins :
- 5
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Surface Mount :
- yes
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 16 Weeks
- Drain Current-Max (Abs) (ID) :
- 36A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-PowerTDFN
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- Published :
- 2014
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- SWITCHING
- Number of Channels :
- 1
- Power Dissipation-Max :
- 1.5W Ta
- Pin Count :
- 5
- Number of Terminations :
- 5
- Turn On Delay Time :
- 17.2 ns
- Datasheets
- NTMFS4982NFT1G

N-Channel Tape & Reel (TR) 1.3m Ω @ 25A, 10V ±20V 6000pF @ 15V 84nC @ 10V 8-PowerTDFN
NTMFS4982NFT1G Overview
A device's maximal input capacitance is 6000pF @ 15V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 207A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 36A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 34.3 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTMFS4982NFT1G Features
a continuous drain current (ID) of 207A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 34.3 ns
NTMFS4982NFT1G Applications
There are a lot of ON Semiconductor
NTMFS4982NFT1G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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