NTMFS4936NT3G
- Mfr.Part #
- NTMFS4936NT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11.6A/79A 5DFN
- Stock
- 34,228
- In Stock :
- 34,228
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 30A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 8 ns
- Rise Time :
- 19ns
- Published :
- 2012
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 5
- Turn-Off Delay Time :
- 29 ns
- Power Dissipation-Max :
- 920mW Ta 43W Tc
- Turn On Delay Time :
- 10.4 ns
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 11.6A Ta 79A Tc
- ECCN Code :
- EAR99
- DS Breakdown Voltage-Min :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Form :
- Flat
- Pin Count :
- 5
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain Current-Max (Abs) (ID) :
- 11.6A
- Number of Pins :
- 5
- Factory Lead Time :
- 16 Weeks
- Surface Mount :
- yes
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Continuous Drain Current (ID) :
- 79A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 3044pF @ 15V
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Lead Free
- Drain to Source Voltage (Vdss) :
- 30V
- Avalanche Energy Rating (Eas) :
- 96.8 mJ
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Datasheets
- NTMFS4936NT3G

N-Channel Tape & Reel (TR) 3.8m Ω @ 30A, 10V ±20V 3044pF @ 15V 43nC @ 10V 30V 8-PowerTDFN, 5 Leads
NTMFS4936NT3G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 96.8 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3044pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.There is no drain current on this device since the maximum continuous current it can conduct is 11.6A.As a result of its turn-off delay time, which is 29 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10.4 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTMFS4936NT3G Features
the avalanche energy rating (Eas) is 96.8 mJ
a continuous drain current (ID) of 79A
the turn-off delay time is 29 ns
a 30V drain to source voltage (Vdss)
NTMFS4936NT3G Applications
There are a lot of ON Semiconductor
NTMFS4936NT3G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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