NTMFS4936NCT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

3.8m Ω @ 30A, 10V

Element Configuration :

Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Drain Current-Max (Abs) (ID) :

11.6A

FET Type :

N-Channel

Pbfree Code :

yes

Rise Time :

19ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.62W

Turn-Off Delay Time :

29 ns

Terminal Finish :

Tin (Sn)

Published :

2012

Package / Case :

8-PowerTDFN, 5 Leads

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

19.5A

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Turn On Delay Time :

10.4 ns

Avalanche Energy Rating (Eas) :

96.8 mJ

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

38 Weeks

Pin Count :

8

Input Capacitance (Ciss) (Max) @ Vds :

3044pF @ 15V

Drain-source On Resistance-Max :

0.0048Ohm

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

8 ns

Terminal Form :

Flat

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

11.6A Ta 79A Tc

Number of Terminations :

5

Number of Pins :

5

Surface Mount :

yes

Power Dissipation-Max :

920mW Ta 43W Tc

Case Connection :

DRAIN

Mounting Type :

Surface Mount