NTMFS4935NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

6.1mm

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2009

Number of Elements :

1

Power Dissipation-Max :

930mW Ta 48W Tc

Number of Terminations :

5

Transistor Element Material :

SILICON

Number of Pins :

5

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

30V

Pin Count :

5

Fall Time (Typ) :

6.6 ns

Terminal Form :

Flat

Continuous Drain Current (ID) :

93A

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

JESD-609 Code :

e3

Contact Plating :

Tin

Case Connection :

DRAIN

Turn On Delay Time :

16.3 ns

Gate Charge (Qg) (Max) @ Vgs :

49.4nC @ 10V

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

27.5 ns

Transistor Application :

SWITCHING

Power Dissipation :

2.63W

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.0042Ohm

Threshold Voltage :

1.63V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4850pF @ 15V

Length :

5.1mm

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Position :

Dual

Height :

1.1mm

Lead Free :

Lead Free

Surface Mount :

yes

Vgs (Max) :

±20V

Rise Time :

20ns

Rds On (Max) @ Id, Vgs :

3.2m Ω @ 30A, 10V

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

13A Ta 93A Tc

Package / Case :

8-PowerTDFN, 5 Leads

Nominal Vgs :

1.63 V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE