NTMFS4933NT3G
- Mfr.Part #
- NTMFS4933NT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A/210A 5DFN
- Stock
- 4,296
- In Stock :
- 4,296
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Number of Terminations :
- 5
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Surface Mount :
- yes
- Rise Time :
- 33ns
- Published :
- 2007
- Terminal Finish :
- Tin (Sn)
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Rds On (Max) @ Id, Vgs :
- 1.2m Ω @ 30A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 210A Tc
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 43A
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 23 ns
- Transistor Element Material :
- SILICON
- Number of Pins :
- 5
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Turn On Delay Time :
- 31 ns
- Power Dissipation-Max :
- 1.06W Ta 104W Tc
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Factory Lead Time :
- 16 Weeks
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 10930pF @ 15V
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Power Dissipation :
- 2.74W
- Pin Count :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 62.1nC @ 4.5V
- Drain-source On Resistance-Max :
- 0.002Ohm
- Turn-Off Delay Time :
- 47 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain Current-Max (Abs) (ID) :
- 20A
- Datasheets
- NTMFS4933NT3G

N-Channel Tape & Reel (TR) 1.2m Ω @ 30A, 10V ±20V 10930pF @ 15V 62.1nC @ 4.5V 8-PowerTDFN, 5 Leads
NTMFS4933NT3G Overview
A device's maximum input capacitance is 10930pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 43A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Its drain current is 20A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 47 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 31 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTMFS4933NT3G Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 47 ns
NTMFS4933NT3G Applications
There are a lot of ON Semiconductor
NTMFS4933NT3G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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