NTMFS4933NT1G
- Mfr.Part #
- NTMFS4933NT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 20A/210A 5DFN
- Stock
- 3,396
- In Stock :
- 3,396
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 23 ns
- Drain Current-Max (Abs) (ID) :
- 20A
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Flat
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Turn On Delay Time :
- 31 ns
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Rise Time :
- 33ns
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Rds On (Max) @ Id, Vgs :
- 1.2m Ω @ 30A, 10V
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 62.1nC @ 4.5V
- Terminal Position :
- Dual
- FET Type :
- N-Channel
- Factory Lead Time :
- 16 Weeks
- Turn-Off Delay Time :
- 47 ns
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Case Connection :
- DRAIN
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 5
- Number of Pins :
- 5
- Pin Count :
- 5
- Continuous Drain Current (ID) :
- 43A
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2.74W
- Power Dissipation-Max :
- 1.06W Ta 104W Tc
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 10930pF @ 15V
- Drain-source On Resistance-Max :
- 0.002Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 20A Ta 210A Tc
- Published :
- 2012
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Datasheets
- NTMFS4933NT1G

N-Channel Tape & Reel (TR) 1.2m Ω @ 30A, 10V ±20V 10930pF @ 15V 62.1nC @ 4.5V 8-PowerTDFN, 5 Leads
NTMFS4933NT1G Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 10930pF @ 15V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 43A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.A device can conduct a maximum continuous current of [20A] according to its drain current.It is [47 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 31 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
NTMFS4933NT1G Features
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 47 ns
NTMFS4933NT1G Applications
There are a lot of ON Semiconductor
NTMFS4933NT1G applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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