NTMFS4926NET1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Power Dissipation-Max :

920mW Ta 21.6W Tc

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

30V

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Rds On (Max) @ Id, Vgs :

7m Ω @ 30A, 10V

Pbfree Code :

yes

Number of Elements :

1

Vgs (Max) :

±20V

Number of Terminations :

5

Surface Mount :

yes

Number of Pins :

5

Pin Count :

5

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.012Ohm

Current - Continuous Drain (Id) @ 25°C :

9A Ta 44A Tc

Published :

2012

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Flat

Mounting Type :

Surface Mount

Terminal Position :

Dual

Lead Free :

Lead Free

Continuous Drain Current (ID) :

44A

Gate Charge (Qg) (Max) @ Vgs :

17.3nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1004pF @ 15V

Element Configuration :

Single

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Package / Case :

8-PowerTDFN, 5 Leads

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Transistor Element Material :

SILICON