NTMFS4925NT3G
- Mfr.Part #
- NTMFS4925NT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9.7A/48A 5DFN
- Stock
- 43,241
- In Stock :
- 43,241
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 5
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 16 Weeks
- Drain-source On Resistance-Max :
- 0.01Ohm
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 5
- Pbfree Code :
- yes
- Terminal Position :
- Dual
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- Rise Time :
- 32.7ns
- Gate Charge (Qg) (Max) @ Vgs :
- 21.5nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Drain Current-Max (Abs) (ID) :
- 9.7A
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 9.7A Ta 48A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 1264pF @ 15V
- Turn On Delay Time :
- 9.5 ns
- Packaging :
- Tape and Reel (TR)
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 48A
- Published :
- 2012
- FET Type :
- N-Channel
- Pin Count :
- 5
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Fall Time (Typ) :
- 6.2 ns
- Turn-Off Delay Time :
- 16.4 ns
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 30A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 920mW Ta 23.2W Tc
- JESD-609 Code :
- e3
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Surface Mount :
- yes
- Power Dissipation :
- 23.2W
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Flat
- Datasheets
- NTMFS4925NT3G

N-Channel Tape & Reel (TR) 5.6m Ω @ 30A, 10V ±20V 1264pF @ 15V 21.5nC @ 10V 8-PowerTDFN, 5 Leads
NTMFS4925NT3G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1264pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 9.7A.As a result of its turn-off delay time, which is 16.4 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.5 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTMFS4925NT3G Features
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 16.4 ns
NTMFS4925NT3G Applications
There are a lot of ON Semiconductor
NTMFS4925NT3G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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