NTMFS4925NT1G
- Mfr.Part #
- NTMFS4925NT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9.7A/48A 5DFN
- Stock
- 23,852
- In Stock :
- 23,852
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 1.1mm
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 23.2W
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 9.7A Ta 48A Tc
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Rds On (Max) @ Id, Vgs :
- 5.6m Ω @ 30A, 10V
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 48A
- Turn On Delay Time :
- 9.5 ns
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Turn-Off Delay Time :
- 16.4 ns
- Published :
- 2011
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Dual
- Length :
- 5.1mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1264pF @ 15V
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 21.5nC @ 10V
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 32.7ns
- Number of Pins :
- 5
- Width :
- 6.1mm
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Terminal Finish :
- Tin (Sn)
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 5
- Qualification Status :
- Not Qualified
- Terminal Form :
- Flat
- Drain to Source Breakdown Voltage :
- 30V
- Pbfree Code :
- yes
- Drain Current-Max (Abs) (ID) :
- 9.7A
- Number of Terminations :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 16 Weeks
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 6.2 ns
- Power Dissipation-Max :
- 920mW Ta 23.2W Tc
- Surface Mount :
- yes
- Datasheets
- NTMFS4925NT1G

N-Channel Tape & Reel (TR) 5.6m Ω @ 30A, 10V ±20V 1264pF @ 15V 21.5nC @ 10V 8-PowerTDFN, 5 Leads
NTMFS4925NT1G Description
A trench gate MOSFET is basically an attempt to make a complete chip. conduct the current vertically from one surface to the other so as to achieve a high. drive capability. It is realized by packing millions of trenches on a chip, deep. enough to cross the oppositely doped 'body' region below the top surface
NTMFS4925NT1G Features
? Low RDS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Optimized for 5 V, 12 V Gate Drives
? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS
Compliant
NTMFS4925NT1G Applications
? CPU Power Delivery
? DC?DC Converters
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