NTMFS4925NET1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

6m Ω @ 30A, 10V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

48A

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

21.5nC @ 10V

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Flat

Case Connection :

DRAIN

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

16.7A

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

30V

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Number of Terminations :

5

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Power Dissipation-Max :

920mW Ta 23.2W Tc

Package / Case :

8-PowerTDFN, 5 Leads

Drain to Source Voltage (Vdss) :

30V

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Surface Mount :

yes

Published :

2011

Number of Pins :

5

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 6 days ago)

Pin Count :

5

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.001ohm

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

9.7A Ta 48A Tc

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1264pF @ 15V

JESD-609 Code :

e3

Terminal Position :

Dual