NTMFS4854NST1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 11.5V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

3.2V 10V

Input Capacitance (Ciss) (Max) @ Vds :

4830pF @ 12V

Power Dissipation-Max :

900mW Ta 86.2W Tc

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Terminations :

8

Vgs (Max) :

±16V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

24.4A

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

15.2A

Pin Count :

8

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

RoHS Status :

RoHS Compliant

Rise Time :

54ns

Radiation Hardening :

No

Turn On Delay Time :

20 ns

Turn-Off Delay Time :

38 ns

Number of Elements :

1

Series :

SENSEFET®

Element Configuration :

Single

Fall Time (Typ) :

45 ns

ECCN Code :

EAR99

Surface Mount :

yes

Published :

2012

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 15A, 10V

Terminal Form :

Flat

Drain to Source Breakdown Voltage :

25V

Power Dissipation :

2.31W

Number of Pins :

8

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

16V

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerTDFN

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

15.2A Ta 149A Tc

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes