NTMFS4852NT3G
- Mfr.Part #
- NTMFS4852NT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A/155A 5DFN
- Stock
- 2,203
- In Stock :
- 2,203
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Surface Mount :
- yes
- Avalanche Energy Rating (Eas) :
- 360 mJ
- ECCN Code :
- EAR99
- Terminal Form :
- Flat
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Rise Time :
- 25.6ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0033Ohm
- Pin Count :
- 5
- DS Breakdown Voltage-Min :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Gate Charge (Qg) (Max) @ Vgs :
- 71.3nC @ 10V
- Nominal Vgs :
- 1.8 V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 155A Tc
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 155A
- Fall Time (Typ) :
- 12 ns
- Turn-Off Delay Time :
- 35 ns
- Turn On Delay Time :
- 21.1 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Number of Terminations :
- 5
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 16 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 2.1m Ω @ 30A, 10V
- Transistor Application :
- SWITCHING
- Number of Pins :
- 5
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Width :
- 6.1mm
- Case Connection :
- DRAIN
- Height :
- 1.1mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4970pF @ 12V
- REACH SVHC :
- No SVHC
- Power Dissipation-Max :
- 900mW Ta 86.2W Tc
- Length :
- 5.1mm
- Published :
- 2012
- Datasheets
- NTMFS4852NT3G

N-Channel Tape & Reel (TR) 2.1m Ω @ 30A, 10V ±20V 4970pF @ 12V 71.3nC @ 10V 30V 8-PowerTDFN, 5 Leads
NTMFS4852NT3G Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 360 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 4970pF @ 12V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 155A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 35 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21.1 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
NTMFS4852NT3G Features
the avalanche energy rating (Eas) is 360 mJ
a continuous drain current (ID) of 155A
the turn-off delay time is 35 ns
a 30V drain to source voltage (Vdss)
NTMFS4852NT3G Applications
There are a lot of ON Semiconductor
NTMFS4852NT3G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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