NTMFS4852NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Package / Case :

8-PowerTDFN, 5 Leads

Continuous Drain Current (ID) :

155A

Gate Charge (Qg) (Max) @ Vgs :

71.3nC @ 10V

Number of Terminations :

5

Number of Elements :

1

Avalanche Energy Rating (Eas) :

360 mJ

Published :

2010

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

Terminal Form :

Flat

Length :

5.1mm

Pin Count :

5

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn On Delay Time :

21.1 ns

Surface Mount :

yes

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

25.6ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4970pF @ 12V

Lead Free :

Lead Free

Pbfree Code :

yes

Turn-Off Delay Time :

35 ns

JESD-609 Code :

e3

Number of Pins :

5

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1.8V

Element Configuration :

Single

Width :

6.1mm

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.31W

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Fall Time (Typ) :

12 ns

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

2.1m Ω @ 30A, 10V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 155A Tc

Resistance :

2.1MOhm

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Height :

1.1mm

Power Dissipation-Max :

900mW Ta 86.2W Tc

Terminal Finish :

Tin (Sn)