NTMFS4851NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 12V

Rise Time :

39.8ns

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

18.6 ns

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 30A, 10V

Published :

2009

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

16V

FET Type :

N-Channel

Lead Free :

Lead Free

Vgs (Max) :

±16V

Fall Time (Typ) :

5.2 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

5

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Mounting Type :

Surface Mount

Number of Terminations :

5

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

5

Power Dissipation-Max :

870mW Ta 41.7W Tc

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

30V

Package / Case :

8-PowerTDFN, 5 Leads

Surface Mount :

yes

Number of Elements :

1

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Drain-source On Resistance-Max :

0.0087Ohm

Drain Current-Max (Abs) (ID) :

100A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Continuous Drain Current (ID) :

66A

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Power Dissipation :

2.16W

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 66A Tc

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN