NTMFS4845NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Rise Time :

48.5ns

Turn-Off Delay Time :

28.9 ns

Surface Mount :

yes

Continuous Drain Current (ID) :

115A

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Lead Free :

Lead Free

Power Dissipation-Max :

890mW Ta 62.5W Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 11.5V

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

16 Weeks

Number of Pins :

5

Case Connection :

DRAIN

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount

Radiation Hardening :

No

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3720pF @ 12V

Pin Count :

5

Drain-source On Resistance-Max :

0.0044Ohm

Package / Case :

8-PowerTDFN, 5 Leads

Pbfree Code :

yes

Max Output Current :

115A

ECCN Code :

EAR99

Turn On Delay Time :

20.5 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 30A, 10V

Power Dissipation :

5.95W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Supply Voltage :

30V

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

12.2 ns

Gate to Source Voltage (Vgs) :

16V

Vgs (Max) :

±16V

Element Configuration :

Single

Number of Terminations :

5

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

13.7A Ta 115A Tc

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Published :

2007