NTMFS4841NT3G
- Mfr.Part #
- NTMFS4841NT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A/57A 5DFN
- Stock
- 1,392
- In Stock :
- 1,392
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- OBSOLETE (Last Updated: 6 days ago)
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 30A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Peak Reflow Temperature (Cel) :
- 260
- Drain Current-Max (Abs) (ID) :
- 8.3A
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 7.5 ns
- Rise Time :
- 66.5ns
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 15.5 ns
- Published :
- 2006
- Vgs (Max) :
- ±20V
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 5
- Number of Terminations :
- 5
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation :
- 5W
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Continuous Drain Current (ID) :
- 13.1A
- Drain to Source Breakdown Voltage :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 5
- Power Dissipation-Max :
- 870mW Ta 41.7W Tc
- Terminal Form :
- Flat
- Input Capacitance (Ciss) (Max) @ Vds :
- 1436pF @ 12V
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta 57A Tc
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Datasheets
- NTMFS4841NT3G

N-Channel Tape & Reel (TR) 7m Ω @ 30A, 10V ±20V 1436pF @ 12V 17nC @ 4.5V 8-PowerTDFN, 5 Leads
NTMFS4841NT3G Overview
A device's maximal input capacitance is 1436pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 13.1A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 8.3A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 15.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (4.5V 10V).
NTMFS4841NT3G Features
a continuous drain current (ID) of 13.1A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 15.5 ns
NTMFS4841NT3G Applications
There are a lot of ON Semiconductor
NTMFS4841NT3G applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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