NTMFS4841NHT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

59A

Length :

5.1mm

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-F6

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

8

Fall Time (Typ) :

2.9 ns

Packaging :

Tape and Reel (TR)

Width :

6.1mm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

5.7W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

21.9 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2113pF @ 12V

Terminal Position :

Dual

Power Dissipation-Max :

870mW Ta 41.7W Tc

FET Type :

N-Channel

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Rise Time :

20.6ns

Number of Terminations :

6

Turn On Delay Time :

12.1 ns

Element Configuration :

Single

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

13.5A

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

8.6A Ta 59A Tc

Terminal Form :

Flat

Package / Case :

8-PowerTDFN, 5 Leads

Published :

2009

Contact Plating :

Tin

Radiation Hardening :

No

ECCN Code :

EAR99

JESD-609 Code :

e3

Pbfree Code :

yes

Vgs (Max) :

±20V

Height :

1.1mm

Pin Count :

8

Rds On (Max) @ Id, Vgs :

7m Ω @ 30A, 10V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 11.5V

Number of Elements :

1