NTMFS4837NHT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Power Dissipation-Max :

880mW Ta 48W Tc

Packaging :

Tape and Reel (TR)

Terminal Form :

Flat

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

16 Weeks

Element Configuration :

Single

Number of Pins :

8

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

5m Ω @ 30A, 10V

FET Type :

N-Channel

Terminal Position :

Dual

Rise Time :

19.6ns

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Elements :

1

Fall Time (Typ) :

4.7 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PDSO-F6

Power Dissipation :

5.8W

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

225A

Case Connection :

DRAIN

Package / Case :

8-PowerTDFN, 5 Leads

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

28 ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

3016pF @ 12V

Continuous Drain Current (ID) :

16A

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Pbfree Code :

yes

Pin Count :

8

Published :

2009

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

23.8nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

10.2A Ta 75A Tc

RoHS Status :

ROHS3 Compliant