NTMFS4836NT3G
- Mfr.Part #
- NTMFS4836NT3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 11A/90A 5DFN
- Stock
- 4,745
- In Stock :
- 4,745
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 20 ns
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- JESD-30 Code :
- R-PDSO-F6
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 12 ns
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2677pF @ 12V
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 4m Ω @ 30A, 10V
- Pin Count :
- 5
- Number of Elements :
- 1
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Number of Terminations :
- 6
- Published :
- 2009
- Number of Pins :
- 5
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Current - Continuous Drain (Id) @ 25°C :
- 11A Ta 90A Tc
- Drain to Source Breakdown Voltage :
- 30V
- RoHS Status :
- RoHS Compliant
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Power Dissipation-Max :
- 890mW Ta 55.6W Tc
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 242 mJ
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Drain Current-Max (Abs) (ID) :
- 11A
- Rise Time :
- 30ns
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Terminal Form :
- Flat
- Pulsed Drain Current-Max (IDM) :
- 180A
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 2.25W
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.006Ohm
- Continuous Drain Current (ID) :
- 90A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 11.5V
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Datasheets
- NTMFS4836NT3G

N-Channel Tape & Reel (TR) 4m Ω @ 30A, 10V ±20V 2677pF @ 12V 28nC @ 4.5V 8-PowerTDFN, 5 Leads
NTMFS4836NT3G Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 242 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2677pF @ 12V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 11A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 20 ns.Peak drain current is 180A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 11.5V), this device contributes to a reduction in overall power consumption.
NTMFS4836NT3G Features
the avalanche energy rating (Eas) is 242 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 20 ns
based on its rated peak drain current 180A.
NTMFS4836NT3G Applications
There are a lot of ON Semiconductor
NTMFS4836NT3G applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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