NTMFS4835NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.1mm

Operating Mode :

ENHANCEMENT MODE

Rise Time :

31ns

Turn On Delay Time :

16 ns

Gate Charge (Qg) (Max) @ Vgs :

52nC @ 11.5V

Fall Time (Typ) :

13 ns

Surface Mount :

yes

Power Dissipation :

62.5W

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Contact Plating :

Tin

Vgs(th) (Max) @ Id :

2.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Package / Case :

8-PowerTDFN, 5 Leads

Power Dissipation-Max :

890mW Ta 62.5W Tc

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 30A, 10V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

20A

Terminal Form :

Flat

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

13A Ta 130A Tc

Pin Count :

5

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

Number of Terminations :

5

Vgs (Max) :

±20V

Pbfree Code :

yes

Turn-Off Delay Time :

22 ns

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Terminal Position :

Dual

Case Connection :

DRAIN

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

208A

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 12V

Avalanche Energy Rating (Eas) :

392 mJ

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

5

JESD-609 Code :

e3

Length :

5.1mm

Width :

6.1mm