NTMFS4833NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

Continuous Drain Current (ID) :

191A

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

5600pF @ 12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2m Ω @ 30A, 10V

Pulsed Drain Current-Max (IDM) :

288A

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Pin Count :

5

Terminal Position :

Dual

Transistor Application :

SWITCHING

Published :

2006

Package / Case :

8-PowerTDFN, 5 Leads

Drain-source On Resistance-Max :

0.003Ohm

Power Dissipation :

2.35W

Turn On Delay Time :

25 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Width :

6.1mm

Surface Mount :

yes

Height :

1.1mm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Radiation Hardening :

No

Number of Pins :

5

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

17 ns

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Nominal Vgs :

1.5 V

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 11.5V

Current - Continuous Drain (Id) @ 25°C :

16A Ta 156A Tc

Rise Time :

34ns

Terminal Form :

Flat

ECCN Code :

EAR99

Vgs (Max) :

±20V

Number of Terminations :

5

Terminal Finish :

Tin (Sn)

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Length :

5.1mm

Turn-Off Delay Time :

35 ns

Pbfree Code :

yes

Power Dissipation-Max :

910mW Ta 125W Tc