NTMFS4833NST3G
- Mfr.Part #
- NTMFS4833NST3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 16A/156A SO-8FL
- Stock
- 32,051
- In Stock :
- 32,051
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Lifecycle Status :
- CONSULT SALES OFFICE (Last Updated: 1 week ago)
- Number of Terminations :
- 8
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 26A
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 11.5V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- Element Configuration :
- Single
- Pin Count :
- 8
- Rise Time :
- 60ns
- Drain Current-Max (Abs) (ID) :
- 16A
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- Series :
- SENSEFET®
- Transistor Element Material :
- SILICON
- Turn-Off Delay Time :
- 37 ns
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 900mW Ta 86.2W Tc
- Fall Time (Typ) :
- 44 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2012
- Number of Pins :
- 8
- Current - Continuous Drain (Id) @ 25°C :
- 16A Ta 156A Tc
- Drain to Source Breakdown Voltage :
- 30V
- Turn On Delay Time :
- 21 ns
- Terminal Form :
- Flat
- Power Dissipation :
- 2.31W
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Package / Case :
- 8-PowerTDFN
- Rds On (Max) @ Id, Vgs :
- 2.2m Ω @ 30A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 5250pF @ 12V
- Datasheets
- NTMFS4833NST3G

N-Channel Tape & Reel (TR) 2.2m Ω @ 30A, 10V ±20V 5250pF @ 12V 86nC @ 11.5V 8-PowerTDFN
NTMFS4833NST3G Overview
The maximum input capacitance of this device is 5250pF @ 12V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 26A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.As shown in the table below, the drain current of this device is 16A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 37 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 21 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
NTMFS4833NST3G Features
a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 37 ns
NTMFS4833NST3G Applications
There are a lot of ON Semiconductor
NTMFS4833NST3G applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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