NTMFS4827NET1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 12V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

5

Pin Count :

8

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

RoHS Compliant

Terminal Form :

Flat

Continuous Drain Current (ID) :

58.5A

Drain Current-Max (Abs) (ID) :

8.8A

JESD-30 Code :

R-PDSO-F5

Published :

2010

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0108ohm

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 4.5V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Package / Case :

8-PowerTDFN, 5 Leads

Case Connection :

DRAIN

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

6.95m Ω @ 30A, 10V

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

8.8A Ta 58.5A Tc

Transistor Element Material :

SILICON

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Vgs (Max) :

±20V

Power Dissipation-Max :

870mW Ta 38.5W Tc

Mount :

Surface Mount