NTMFS4826NET1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

30V

Published :

2010

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

5.9m Ω @ 30A, 10V

Continuous Drain Current (ID) :

66A

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9.5A

JESD-30 Code :

R-PDSO-F5

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Rise Time :

39.8ns

Package / Case :

8-PowerTDFN, 5 Leads

Fall Time (Typ) :

5.2 ns

Terminal Form :

Flat

Element Configuration :

Single

Pin Count :

8

Number of Terminations :

5

Power Dissipation :

2.16W

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 12V

Power Dissipation-Max :

870mW Ta 41.7W Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Qualification Status :

Not Qualified

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0087Ohm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

9.5A Ta 66A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Operating Temperature :

-40°C~150°C TJ