NTMFS4825NFET3G
- Mfr.Part #
- NTMFS4825NFET3G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 17A/171A 5DFN
- Stock
- 12,005
- In Stock :
- 12,005
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Fall Time (Typ) :
- 13 ns
- Continuous Drain Current (ID) :
- 171A
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Published :
- 2010
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta 171A Tc
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Number of Terminations :
- 5
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 40.2nC @ 4.5V
- Drain Current-Max (Abs) (ID) :
- 17A
- Mount :
- Surface Mount
- Pin Count :
- 5
- Case Connection :
- DRAIN
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation :
- 2.74W
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5660pF @ 15V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 30V
- Number of Pins :
- 5
- Element Configuration :
- Single
- Rise Time :
- 24ns
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 950mW Ta 96.2W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- CONSULT SALES OFFICE (Last Updated: 2 weeks ago)
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 22A, 10V
- Drain-source On Resistance-Max :
- 0.002Ohm
- Datasheets
- NTMFS4825NFET3G

N-Channel Tape & Reel (TR) 2m Ω @ 22A, 10V ±20V 5660pF @ 15V 40.2nC @ 4.5V 8-PowerTDFN, 5 Leads
NTMFS4825NFET3G Overview
A device's maximum input capacitance is 5660pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 171A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Its drain current is 17A, and it is the maximum continuous current the device can conduct.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
NTMFS4825NFET3G Features
a continuous drain current (ID) of 171A
a drain-to-source breakdown voltage of 30V voltage
NTMFS4825NFET3G Applications
There are a lot of ON Semiconductor
NTMFS4825NFET3G applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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