NTMFS4823NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

29ns

Rds On (Max) @ Id, Vgs :

10.6m Ω @ 30A, 10V

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 11.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Packaging :

Tape and Reel (TR)

Number of Terminations :

5

Continuous Drain Current (ID) :

30A

Threshold Voltage :

1.9V

Gate to Source Voltage (Vgs) :

16V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

JESD-609 Code :

e3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta 30A Tc

Lifecycle Status :

ACTIVE (Last Updated: 5 days ago)

Resistance :

10.6mOhm

Fall Time (Typ) :

3.8 ns

Length :

5.1mm

Case Connection :

DRAIN

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

795pF @ 15V

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Element Configuration :

Single

Drain to Source Breakdown Voltage :

30V

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Width :

6.1mm

Lead Free :

Lead Free

Factory Lead Time :

2 Weeks

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Power Dissipation :

5.43W

Drain Current-Max (Abs) (ID) :

6.9A

Pin Count :

5

Pbfree Code :

yes

Turn-Off Delay Time :

12.7 ns

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Package / Case :

8-PowerTDFN, 5 Leads

Terminal Position :

Dual

Turn On Delay Time :

10.8 ns

Surface Mount :

yes

Height :

1.1mm

Power Dissipation-Max :

860mW Ta 32.5W Tc

Number of Pins :

5

Mounting Type :

Surface Mount