NTMFS4744NT1G
- Mfr.Part #
- NTMFS4744NT1G
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN, 5 Leads
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 7A 5DFN
- Stock
- 3,893
- In Stock :
- 3,893
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 7A Ta
- Rds On (Max) @ Id, Vgs :
- 7.6m Ω @ 30A, 10V
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1300pF @ 12V
- Fall Time (Typ) :
- 83 ns
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Rise Time :
- 203ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Terminal Form :
- Flat
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 11.5V
- Vgs (Max) :
- ±20V
- Package / Case :
- 8-PowerTDFN, 5 Leads
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 4.5V
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Pin Count :
- 5
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Drain Current-Max (Abs) (ID) :
- 7A
- Number of Terminations :
- 5
- Continuous Drain Current (ID) :
- 53A
- Transistor Element Material :
- SILICON
- Drain to Source Breakdown Voltage :
- 30V
- Turn On Delay Time :
- 12 ns
- Avalanche Energy Rating (Eas) :
- 286 mJ
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Power Dissipation-Max :
- 880mW Ta 47.2W Tc
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 2.2W
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 14 ns
- Published :
- 2006
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Number of Pins :
- 5
- Datasheets
- NTMFS4744NT1G

N-Channel Tape & Reel (TR) 7.6m Ω @ 30A, 10V ±20V 1300pF @ 12V 17nC @ 4.5V 8-PowerTDFN, 5 Leads
NTMFS4744NT1G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 286 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1300pF @ 12V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.There is no drain current on this device since the maximum continuous current it can conduct is 7A.As a result of its turn-off delay time, which is 14 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 12 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 11.5V).
NTMFS4744NT1G Features
the avalanche energy rating (Eas) is 286 mJ
a continuous drain current (ID) of 53A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 14 ns
NTMFS4744NT1G Applications
There are a lot of ON Semiconductor
NTMFS4744NT1G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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