NTMFS4121NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Power Dissipation :

2.2W

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Published :

2007

Voltage - Rated DC :

30V

Continuous Drain Current (ID) :

11A

Vgs (Max) :

±20V

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

40

Rds On (Max) @ Id, Vgs :

5.25m Ω @ 24A, 10V

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Transistor Element Material :

SILICON

Power Dissipation-Max :

900mW Ta

Current Rating :

17A

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 24V

Drain to Source Breakdown Voltage :

30V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.00525Ohm

Fall Time (Typ) :

31 ns

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Package / Case :

8-PowerTDFN, 5 Leads

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

12V

Pin Count :

8

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Lead Free :

Lead Free

JESD-30 Code :

R-PDSO-F5

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 4.5V

Number of Pins :

8

Turn-Off Delay Time :

32 ns

Case Connection :

DRAIN

Rise Time :

29ns