NTMFS4120NT3G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Transistor Element Material :

SILICON

Voltage - Rated DC :

30V

Mount :

Surface Mount

JESD-609 Code :

e3

Published :

2007

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 26A, 10V

Fall Time (Typ) :

31 ns

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 24V

Drain-source On Resistance-Max :

0.0045ohm

Pin Count :

8

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

27 ns

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PDSO-F5

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation-Max :

900mW Ta

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Number of Elements :

1

FET Type :

N-Channel

Current Rating :

18A

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation :

2.2W

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

5

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

12V

Package / Case :

8-PowerTDFN, 5 Leads

Terminal Form :

Flat

Rise Time :

32ns