NTLUS3A90PZTAG
- Mfr.Part #
- NTLUS3A90PZTAG
- Manufacturer
- onsemi
- Package / Case
- 6-PowerUFDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 2.6A 6UDFN
- Stock
- 2,916
- In Stock :
- 2,916
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Position :
- Dual
- Rds On (Max) @ Id, Vgs :
- 62m Ω @ 4A, 4.5V
- DS Breakdown Voltage-Min :
- 20V
- Power Dissipation :
- 1.5W
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 8V
- Current - Continuous Drain (Id) @ 25°C :
- 2.6A Ta
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- S-PDSO-N3
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 7.9 ns
- Number of Pins :
- 6
- Published :
- 2010
- Power Dissipation-Max :
- 600mW Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Factory Lead Time :
- 2 Weeks
- Fall Time (Typ) :
- 28.5 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 10V
- Vgs (Max) :
- ±8V
- Pin Count :
- 6
- Drain Current-Max (Abs) (ID) :
- 4A
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Series :
- µCool™
- Turn-Off Delay Time :
- 34.8 ns
- Rise Time :
- 15.7ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Drain to Source Voltage (Vdss) :
- 20V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 12.3nC @ 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- P-Channel
- Package / Case :
- 6-PowerUFDFN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 4A
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Datasheets
- NTLUS3A90PZTAG

P-Channel Tape & Reel (TR) 62m Ω @ 4A, 4.5V ±8V 950pF @ 10V 12.3nC @ 4.5V 20V 6-PowerUFDFN
NTLUS3A90PZTAG Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 950pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 4A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 4A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 34.8 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 20V in order to maintain normal operation.Operating this transistor requires a 20V drain to source voltage (Vdss).By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
NTLUS3A90PZTAG Features
a continuous drain current (ID) of 4A
the turn-off delay time is 34.8 ns
a 20V drain to source voltage (Vdss)
NTLUS3A90PZTAG Applications
There are a lot of ON Semiconductor
NTLUS3A90PZTAG applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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